This book presents the most recent important ideas and developments in the field of hydrogenated amorphous silicon and related materials. We use cookies to make interactions with our website easy and meaningful, to better understand the use of our services, and to tailor advertising. Structure, preparation, and devices topics in applied physics. Amorphous silicon and related materials advances in disordered. Skip to main content accessibility help we use cookies to distinguish you from other users and to provide you with a better experience on our websites. Basic properties of hydrogenated amorphous silicon asi. Growth processes of hydrogenated amorphous silicon mrs. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. Other properties that could play a role are hydrogen concentration and its complex bonding mechanism, as well as the concentration of impurities. The physics of hydrogenated amorphous silicon i nasaads. Hydrogenated amorphous silicon is a disordered semiconductor whose optoelectronic properties are governed by the large number of defects present in its atomic structure. The physics and applications of amorphous semiconductors. Amorphous semiconductors in electronics in what is now called hydrogenated amorphous silicon, emerged in a scientific puzzle that took years to solve. This book describes the properties and device applications of hydrogenated amorphous silicon.
Hydrogenated amorphous silicon cambridge solid state science. Condensed matter physics, nanoscience and mesoscopic physics hydrogenated amorphous silicon by r. These properties depend on the number of fixed charges qf and interface density of states dit and are in turn related to bulk and interface properties. Hydrogenated amorphous silicon cambridge solid state science series by street, r. The analysis of the efficiency degradation of the lightsoaked hydrogenated amorphous silicon solar cell staeblerwronski effect is the key issue in this book. H can be deposited by plasmaenhanced chemicalvapor deposition pecvd on almost any substrate at temperatures below 230 c, thus preserving compatibility with any microelectronic technology.
Pdf optical properties of hydrogenated amorphous silicon. H the effective band gap between the conduction and valence band edges is around 1. At the present time hydrogenated amorphous silicon asi. Its success is due to the compatibility with the silicon cmos technology, the possibility of doping n or p type, the low substrate temperatures used. This chapter introduces our research on amorphous silicon photonics. Material properties of hydrogenated amorphous silicon. Part of the topics in applied physics book series tap, volume 56 log in to check access. Lecomber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly. Advances in amorphous semiconductors crc press book. A valence band tail plus defect model is used for it,combining with a modified hydrogen collision model for the estimation of. Hydrogen plasma etching of hydrogenated amorphous silicon. When adjusting the hydrogenated amorphous silicon alloy by deposition of a conventional deposition chamber, the deposition gas mixture, such as methane ch 4, germane germanium hydride geh 4, tetrafluoroboric germanium gef 4, for example digermane higher order, such as ge 2 h 6 germane, such as diborane b 2 h 6 or phosphine ph 3. As simple elemental tetrahedrally bonded amorphous semiconductors, they served as model systems in which the disorder was less complicated, being defined not by chemical composition but by the structural disorder only.
Stability of hydrogenated amorphous silicon diodes as thin. The physics of hydrogenated amorphous silicon ii electronic. At that time amorphous silicon and amorphous germanium, asi and age, were of more academic scientific interest. Hydrogenated amorphous silicon alloy deposition processes. Hydrogenated amorphous silicon article about hydrogenated.
Hydrogenated amorphous silicon chemistry britannica. H is a semiconductor material, in contrast to the above passivation materials that are all dielectric materials. Introduction of hydrogen was simulated with dft as well and showed a lower dos in the bandgap resulting in a better surface passivation. A valence band tail plus defect model is used for it,combining with a modified hydrogen collision model for the estimation of the defect density.
This seems to be due to the optoelectronic application of the material. This book explores these issues and their implications, and provides a full treatment of both experimental and theoretical studies in the field. The physics of hydrogenated amorphous silicon ii electronic and. H increases with light exposure, causing an increase in the recombination current and reducing the efficiency of the conversion of sunlight into electricity. Stated briefly, hydrogen eliminates the electronic defects that are intrinsic to pure amorphous silicon. Charge carriers have a short lifetime in such a material. Over recent decades, surfacepassivating properties of pecvd asinx. Hydrogenated amorphous silicon an overview sciencedirect. The physics of hydrogenated amorphous silicon i structure. Consequently, due to this characteristic, no semiconductor property would be expected from this material. H have been synthesized in an rf capacitively coupled pecvd system using a mixture of hydrogen diluted silane and helium, under deposition conditions at the edge of powder formation within the plasma. Introduction amorphous silicon, and its more useful alloy form, hydrogenated amorphous silicon asi. Growth processes of hydrogenated amorphous silicon volume 609 john robertson.
Amorphous alloys of silicon and carbon amorphous silicon carbide, also hydrogenated, asi 1. Hydrogenated amorphous silicon, part d device applications. The physics of hydrogenated amorphous silicon i structure, preparation, and devices. The paperback of the the physics of hydrogenated amorphous silicon i. H, has been the subject of investigation for more than three deca des. Hydrogenated amorphous silicon chalcogen alloy thin films have been the subject of growing interest during the past two decades. The physics of hydrogenated amorphous silicon book, 1983. However, formatting rules can vary widely between applications and fields of interest or study. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material.
The first part of the book covers hydrogenated amorphous silicon type alloys, whose applications include inexpensive solar cells, thin film transistors, image scanners, electrophotography, optical recording, and gas sensors. The physics of hydrogenated amorphous silicon i springerlink. The physics of hydrogenated amorphous silicon ii electronic and vibrational properties. Therefore, in addition to being a passivation scheme, asi. Amorphous silicon or asi is not suited to be used for solar cells because it contains many dangling bonds. These device technologies are promising for threedimensional. Fabrication of hydrogenated amorphous silicon thin film solar.
Read online now hydrogenated amorphous silicon ebook pdf at our library. H applied to completed solar cells was proven as well and confirmed by pc1d device simulations. Hydrogenated amorphous silicon and related alloy films have attracted much attention because of the wide application of these films in devices such as thinfilm transistors and solar cells. H is a mature material of the microelectronics and photovoltaic industries. Other readers will always be interested in your opinion of the books youve read. The emphasis is on the optical and electronic properties that result from the disordered structure. A systematic deposition of hydrogenated amorphous silicon films from puresihsub 4 plasma was made in a capacitively coupled rf glowdischarge system by changing anodecathode spacing d and chamber pressure p simultaneously. H is a suitable material for the realization of planar waveguides to route and modulate the optical signal. H thinfilm transistor tft gate driver with a lowleakage capacitive coupling structure to reduce the delay of the clock signal. Thin films of hydrogenated amorphous silicon containing nanocrystalline silicon inclusions ancsi. Introduction of carbon atoms adds extra degrees of freedom for control of the properties of the material. Hydrogenated amorphous siliconchalcogen alloy thin films have been the subject of growing interest.
We have grown films of hydrogenated amorphous silicon, asi. Effects of discharge parameters on deposition rate of. Surface passivation of industrial crystalline silicon solar cells,2018. Jph06103667b2 method of making hydrogenated amorphous. Get hydrogenated amorphous silicon pdf file for free from our online library pdf file. Amorphous silicon lacks the ordering of silicon atoms in the form of a crystalline lattice. Hydrogenated amorphous silicon alloy deposition processes applied physics 1st edition by werner luft author. Hydrogenated amorphous silicon cambridge solid state. However, we must mention that when in the context of solar cells we talk about amorphous silicon it must be understood that a certain amount of hydrogen has been. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure, and the applications of this technologically very important material.
From experiment to modeling franco gaspari university of ontario institute of technology, canada 1. The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions. Amorphous silicon an overview sciencedirect topics. Close this message to accept cookies or find out how to manage your cookie settings. H can be deposited by plasmaenhanced chemicalvapor deposition pecvd on almost any substrate at temperatures below 230 c, thus preserving compatibility with any. For all enquiries, please contact herb tandree philosophy books directly customer service. The data of the deposition rate in the pvsd space had two boundaries. Amorphous, polymorphous, and microcrystalline silicon thin.
Amorphous silicon asi please note the most texts switch between asi and asi. Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. H waveguides with ultralowloss, vertical interlayer transition vit devices for cross coupling between vertically stacked optical circuits. Amorphous silicon asi is the noncrystalline form of silicon used for solar cells and thinfilm transistors in lcds used as semiconductor material for asi solar cells, or thinfilm silicon solar cells, it is deposited in thin films onto a variety of flexible substrates, such as glass, metal and plastic. The staeblerwronski effect swe refers to lightinduced metastable changes in the properties of hydrogenated amorphous silicon the defect density of hydrogenated amorphous silicon asi. H are recognized as being useful materials for constructing devices related to optoelectronics, such as solar cells, thinfilm transistors, etc. It covers the growth, the atomic and electronic structure, the properties of.
Optoelectronic properties of amorphous silicon the role of. Hydrogenated amorphous silicongermanium alloys technical. This work proposes a hydrogenated amorphous silicon asi. Structure, preparation, and devices topics in applied physics joannopoulos, j. Because it can be vapor deposited onto large substrates, amorphous silicon is used to create thin film transistors on almost all active matrix lcd screens as well as thin film photovoltaic cells on solar panels manufactured in long sheets. Amorphous and microcrystalline silicon springerlink. Street, cambridge university press, cambridge 1991, xiv, 417 pp. Timeresolved charge transport in hydrogenated amorphous silicon. Advances in amorphous semiconductors covers a wide range of studies on hydrogenated amorphous silicon, amorphous chalcogenides, and some oxide glasses. Spectroscopic and optoelectronic properties of hydrogenated. Sep 30, 2005 this book describes the properties and device applications of hydrogenated amorphous silicon. This report describes the effects of the germanium fraction in hydrogenated amorphous silicon germanium alloys on various parameters, especially those that are indicators of film quality, and the impact of deposition methods, feedgas mixtures, and other deposition parameters on a sige. The effect of qf at the interface on the passivating properties of asinx. If the dangling bonds are saturated by hydrogen, then you get hydrogenated amorphous silicon asi.
Growth processes of hydrogenated amorphous silicon volume 609 john robertson skip to main content accessibility help we use cookies to distinguish you from other users and to provide you with a better experience on our websites. H films were deposited by lowfrequency plasmaenhanced chemical vapor deposition pecvd on silicon substrate using sih 4. Colloidal particles of hydrogenated amorphous silicon asi. H the effective band gap between the conduction and valence band edges is around. By exploring our highquality silicon thinfilm technology, we have demonstrated hydrogenated amorphous silicon asi. Optoelectronic properties of amorphous silicon the role of hydrogen. Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Tap, volume 55 chapters table of contents 7 chapters about about this book. Whether youve loved the book or not, if you give your honest and detailed thoughts then people will find new books that are right for them.
1662 828 1169 317 1171 754 1510 754 255 1284 1528 488 657 834 180 1473 791 850 1621 772 807 524 1494 1347 780 1179 1356 698 484 1438 1140 1001 529 1093 292 522 1213 1129 502 88 102